BSP318S_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Rev 2.2
BSP318S
SIPMOS^® Small-Signal-Transistor
Features
Product Summary
• N-Channel
• Enhancement mode
Drain source voltage
V_DS
Drain-Source on-state resistance R_DS(on)
• Avalanche rated
• Logic Level
Continuous drain current
I_D
• dv/dt rated
4
• ^{Pb-free lead plating; RoHS compliant}
• Qualified according to AEC Q101
Pin 1 Pin 2, 4 PIN 3
G
D
S
60
0.09
2.6
1
V
Ω
A
3
2
VPS05163
Type
BSP318S
Package Tape and Reel Marking
PG-SOT223 L6327: 1000 pcs/r BSP318S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Pulsed drain current
T_A = 25 °C
I_D
I_{D puls}
Avalanche energy, single pulse
I_D = 2.6 A, V_DD = 25 V, R_GS = 25 Ω
Avalanche current,periodic limited by T_jmax
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AS
I_AR
E_AR
dv/dt
I_S = 2.6 A, V_DS = 20 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
Power dissipation
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Packaging
Non dry
Value
2.6
10.4
60
2.6
0.18
6
±20
1.8
-55... +150
55/150/56
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
Page 1
2008-03-21