BSP318S Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)

Final data
BSP318S
SIPMOS^® Small-Signal-Transistor
Features
• N-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Drain source voltage
V_DS
60 V
Drain-Source on-state resistance R_DS(on) 0.09 Ω
Continuous drain current
I_D
2.6 A
4
Type
BSP318S
Package
SOT-223
Ordering Code
Q67000-S4002
3
2
1
VPS05163
Pin 1 Pin 2, 4 PIN 3
G
D
S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
I_D = 2.6 A, V_DD = 25 V, R_GS = 25 Ω
Avalanche current,periodic limited by T_jmax
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
I_AR
E_AR
dv/dt
I_S = 2.6 A, V_DS = 20 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
Power dissipation
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
2.6
10.4
60
2.6
0.18
6
±20
1.8
-55... +150
55/150/56
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
Page 1
1999-10-28