BSP316P_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

BSP 316 P
SIPMOS^ Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Product Summary
V_DS
-100 V
R_DS(on) 1.8 Ω
I_D
-0.68 A
PG-SOT223-4-1
Gate
pin1
Drain
pin 2/4
Source
pin 3
Type
Package
Tape and Reel Information Marking
BSP 316 P ^{PG-SOT223-4-1} L6327: 1000 pcs/reel
BSP316P
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=-0.68A, V_DS=-48V, di/dt=-200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-0.68
-0.54
-2.72
6
±20
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev.1.5
Page 1
2007-02-23