BSP315P Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
BSP 315 P
SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Drain source voltage
V_DS
-60 V
Drain-Source on-state resistance R_DS(on) 0.8 Ω
Continuous drain current
I_D
-1.17 A
4
Type
BSP 315 P
Package
SOT-223
Ordering Code
Q67042-S4004
Pin 1
G
3
2
1
VPS05163
Pin2/4 PIN 3
D
S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A = 25 °C
T_A = 70 °C
Pulsed drain current
T_A = 25 °C
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = -1.17 A , V_DD = -25 V, R_GS = 25 Ω
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = -1.17 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
-1.17
-0.94
-4.68
24
0.18
6
±20
1.8
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-09-14