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| BSP298_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal Transistor | |||
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BSP 298
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche rated
⢠VGS(th)= 2.1 ... 4.0 V
⢠Pb-free lead plating; RoHS compliant
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 298
Type
BSP 298
VDS
400 V
Pb-free
Yes
ID
0.5 A
RDS(on)
3â¦
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 298
Maximum Ratings
Parameter
Continuous drain current
TA = 26 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V, RGS = 25 â¦
L = 125 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
Unit
A
0.5
2
mJ
130
± 20
V
W
1.8
Rev. 2.2 Semiconductor Group
1
2007-02-26
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