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BSP297_09 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor
Rev. 2.1
BSP297
SIPMOSÒ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
• Pb-free lead plating; RoHS compliant
x Qualified according to AEC Q101
Type
BSP297
Package
PG-SOT223
Tape and Reel Information
L6327: 1000 pcs/reel
Product Summary
VDS
200 V
RDS(on) 1.8 W
ID
0.66 A
PG-SOT223
4
Marking
BSP297
3
2
1
VPS05163
Packaging
Non dry
Pb-free
Yes
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID
ID puls
dv/dt
0.66
0.53
2.64
6
A
kV/µs
IS=0.66A, VDS=160V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD (JESD22-A114-HBM)
VGS
±20
V
1B (>500V, <1000V)
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
1.8
W
-55... +150
°C
55/150/56
Page 1
2009-08-18