BSP296L6327 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Rev. 2.1
BSP296
SIPMOS^ Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
• Pb-free lead plating; RoHS compliant
x Qualified according to AEC Q101
Product Summary
V_DS
100 V
R_DS(on) 0.7 Ω
I_D
1.1 A
PG-SOT223
4
3
2
1
VPS05163
Type
BSP296
BSP296
Package
PG-SOT223
PG-SOT223
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
Marking Packaging
BSP296 Non dry
BSP296 ^{Non dry}
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_D
I_{D puls}
dv/dt
A
1.1
0.88
4.4
6
kV/µs
I_S=1.1A, V_DS=80V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
ESD (JESD22-A114-HBM)
V_GS
±20
V
1B (>500V, <1000V)
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
1.79
W
-55... +150
°C
55/150/56
Page 1
2009-08-18