BSP296 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

Rev. 1.0
SIPMOS^ Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSP296
Product Summary
V_DS
100 V
R_DS(on) 0.7 Ω
I_D
1.1 A
SOT-223
4
3
2
1
VPS05163
Type
BSP296
Package
SOT-223
Ordering Code Tape and Reel Information Marking
Q67000-S067
E6327
BSP296
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=1.1A, V_DS=80V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
V_GS
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
Value
1.1
0.88
4.4
6
±20
Class 1
1.79
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10