BSP295_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Rev 1.3
BSP295
SIPMOS^ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode
· dv/dt rated
• ^{Pb-free lead plating; RoHS compliant}
Product Summary
V_DS
R_DS(on)
60 V
0.3 W
I_D
1.8 A
PG-SOT-223
4
Type
BSP295
Package
PG-SOT-223
Tape and Reel Information Marking
L6327: 1000 pcs/reel
BSP295
3
2
1
VPS05163
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
V_GS
Power dissipation
P_tot
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
1.8
1.44
7.2
6
±20
Class 1
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2007-02-07