BSP295L6327 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Rev 2.3
BSP295
SIPMOS^ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode
· dv/dt rated
• ^{Pb-free lead plating; RoHS compliant}
x Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Product Summary
V_DS
R_DS(on)
60 V
0.3 W
I_D
1.8 A
PG-SOT223
4
3
2
1
VPS05163
Type
BSP295
Package
PG-SOT223
Tape and Reel Information Marking Packaging
H6327: 1000 pcs/reel
BSP295 Non dry
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Continuous drain current
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_D
I_{D puls}
dv/dt
1.8
1.44
7.2
6
I_S=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
V_GS
±20
1B (>500V, <1000V)
Power dissipation
T_A=25°C
P_tot
1.8
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2012-11-28