BSP171P_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
BSP171P
-60 V
0.3 Ω
-1.9 A
PG-SOT-223
Type
Package
BSP 171 P PG-SOT-223
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
171P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _A=25 °C¹⁾
T _A=70 °C¹⁾
Pulsed drain current
I _D,pulse T _A=25 °C
Avalanche energy, single pulse
E _AS
I _D=-1.9 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=-1.9 A,
V _DS=-48 V,
di /dt =-200 A/µs,
T _j,max=150 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _A=25 °C¹⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
steady state
-1.9
-1.5
-7.6
70
-6
±20
1.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.4
page 1
2007-02-08