BSP171P Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
Product Summary
V _DS
R _DS(on),max
I_D
BSP171P
-60 V
0.3 Ω
-1.9 A
SOT-223
Type
BSP 171 P
Package
SOT-223
Ordering Code Marking
Q67041-S4019 171P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C¹⁾
T _A=70 °C¹⁾
T _A=25 °C
Avalanche energy, single pulse
Reverse diode dv /dt
E _AS
dv /dt
I _D=-1.9 A, R _GS=25 Ω
I _D=-1.9 A,
V _DS=-48 V,
di /dt =-200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _A=25 °C¹⁾
T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
steady state
-1.9
-1.5
-7.6
70
-6
±20
1.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-01-20