BSP170P_09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead finishing; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
BSP 170 P
-60 V
0.3 Ω
-1.9 A
PG-SOT-223
Type
Package
BSP 170 P PG-SOT-223
Tape and reel information
L6327: 1000pcs/reel
Marking Lead free
BSP170 Yes
Packing
Non Dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _A=25 °C
T _A=70 °C
Pulsed drain current
I _D,pulse T _A=25 °C
Avalanche energy, single pulse
E _AS
Avalanche energy, periodic limited by
T_jmax
E _AR
I _D=1.9 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=1.9 A, V _DS=48 V,
di /dt =-200 A/µs,
T _j,max=150 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
ESD class
JESD22-A114 (HBM)
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
steady state
-1.9
A
-1.5
-7.6
70
mJ
0.18
-6
kV/µs
±20
V
1.8
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
55/150/56
Rev 2.52
page 1
2009-02-16