BSP170P Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)

Final data
SIPMOS^ Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Type
BSP 170 P
Package
SOT-223
Ordering Code
Q67041-S4018
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=-1.9 A , V_DD=-25V, R_GS=25Ω
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S=-1.9A, V_DS=-48V, di/dt=-200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
BSP 170 P
Product Summary
V_DS
-60 V
R_DS(on) 0.3 Ω
I_D
-1.9 A
SOT-223
4
3
2
1
VPS05163
Gate
pin1
Drain
pin 2
Source
pin 3
Value
-1.9
-1.5
-7.6
70
0.18
-6
±20
1.8
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-16