BSP135_10 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V _GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Product Summary
V _DS
R _DS(on),max
I _DSS,min
BSP135
600 V
60 Ω
0.02 A
PG-SOT223
Type
BSP135
BSP135
Package
PG-SOT22
PG-SOT22
Tape and Reel Information
Marking
L6327: 1000 pcs/reel
BSP135
L6906: 1000 pcs/reel inVGSth bands 1) BSP135
Packaging
Non dry
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Reverse diode dv /dt
dv /dt
I _D=0.12 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
V _GS
ESD Class
(JESD22-A114-HBM)
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{see table on next page and diagram 11}
0.12
A
0.10
0.48
6
kV/µs
±20
V
1A (>250V, <500V)
1.8
W
-55 ... 150
°C
55/150/56
Rev. 1.31
page 1
2010-07-19