BSP135 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
Product Summary
V _DS
R _DS(on),max
I _DSS,min
BSP135
600 V
60 Ω
0.02 A
SOT-223
Type
BSP135
Package
SOT-223
Ordering Code Tape and Reel Information
Q62702-S655 E6327: 1000 pcs/reel
Marking
BSP135
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Reverse diode dv /dt
dv /dt
I _D=0.12 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
V _GS
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
0.12
0.10
0.48
6
±20
Class 1
1.8
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2003-04-03