BSP129L6327HTSA1 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS® Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V _GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Product Summary
V_DS
R_DS(on),max
I_DSS,min
BSP129
240 V
6W
0.05 A
PG-SOT223
Type
Type
BSP129
BBSSPP121929
BSP129
Package
Package
PG-SOT223
PPGG-S-SOOTT222323
PG-SOT223
Tape and Reel
T_Ha6p3e2a7n: d10R0e0elpcs/reel
L_H66392076: _{:11000000ppcsc/sr/ereeel l}
Ls6o9r0te6d: 1in00^V0^Gp^S(c^ths⁾/breaenldssoe¹⁾d
Marking
Packaging
Marking
Packaging
BSP129
Non dry
BSP12B9SP129Non drNyon _dry
BSP129
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
I_D
I _D,pulse
dv /dt
V _GS
T _A=25 °C
T _A=70 °C
T _A=25 °C
I _D=0.36 A,
V _DS=192 V,
di /dt =200 A/µs,
T _j,max=150 °C
0.35
0.28
1.4
6
±20
Unit
A
kV/µs
V
ESD class (JESD22-A114-HBM)
1A(>250V,<500V)
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{see table on next page and diagram 11}
1.8
W
-55 ... 150
°C
55/150/56
Rev. 1.42
page 1
2012-11-29