BSP123 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

Rev. 1.0
SIPMOS^® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSP123
Product Summary
V_DS
100 V
R_DS(on)
6
Ω
I_D
0.37 A
SOT223
Type
BSP123
Package
SOT223
Ordering Code Tape and Reel Information Marking
Q67000-S306 E6327: 1000 pcs/reel
BSP123
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=0.37A, V_DS=80V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
V_GS
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
Value
0.37
0.3
1.48
6
±20
Class 1
1.79
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-26