BSO615CG_12 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – SIPMOSÒ Small-Signal-Transistor

Rev. 2.1
BSO 615 C G
SIPMOS^® Small-Signal-Transistor
Features
Product Summary
N
· Dual N- and P -Channel
Drain source voltage
V_DS
60
· Enhancement mode
· Logic Level
Drain-Source on-state
resistance
R_DS(on) 0.11
· Avalanche rated
Continuous drain current I_D
3.1
· Pb-free lead plating; RoHS compliant
P
-60 V
0.3 W
-2 A
Type
Package
Marking
BSO 615 C PG-DSO-8
615C
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A = 25 °C
T_A = 70 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
W I_D = 3.1 A , V_DD = 25 V, R_GS = 25
W I_D = -2 A , V_DD = -25 V, R_GS = 25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt, T_jmax = 150 °C
I_S = 3.1 A, V_DS = 48 V, di/dt = 200 A/µs
I_S = -2 A, V_DS = -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_D
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
N
P
3.1
-2
2.5
-1.6
12.4
-8
47
-
-
70
0.2
0.2
6
-
-
6
±20
±20
2
2
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2012-04-04