BSO613SPVG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^® Power-Transistor
BSO613SPV G
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Type
BSO613SPV G
Package
PG-SO 8
Product Summary
Drain source voltage
V_DS
-60 V
Drain-source on-state resistance R_DS(on) 0.13 W
Continuous drain current
I_D
-3.44 A
S1
8D
S2
7D
S3
6D
G4
5D
Top View SIS00062
Lead free
Yes
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A = 25 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
I_D = -3.44 A , V_DD = -25 V, R_GS = 25 W
I_{D puls}
E_AS
Avalanche energy, periodic limited by T_jmax
E_AR
Reverse diode dv/dt
dv/dt
I_S = -3.44 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 °C
Operating and storage temperature
T_j , T_stg
IEC climatic category; DIN IEC 68-1
Value
-3.44
-13.8
150
0.25
6
±20
2.5
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev.1.3
Page 1
2007-03-02