BSO604NS2 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^ Power-Transistor
Feature
• Dual N-Channel
• Enhancement mode
• Logic Level
•150 °C operating temperature
• Avalanche rated
• dv/dt rated
BSO604NS2
Product Summary
V_DS
55 V
R_DS(on) 35 mΩ
I_D
5A
P-DSO-8 -7
Type
BSO604NS2
Package
P-DSO-8 -7
Ordering Code Marking
Q67060-S7309 _2N604L
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C, one channel active
T_A=70°C, one channel active
Pulsed drain current, one channel active
T_A=25°C
Avalanche energy, single pulse
I_D=5 A , V_DD=25V, R_GS=25Ω
Reverse diode dv/dt
I_{D puls}
E_AS
dv/dt
I_S=5A, V_DS=44V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation, one channel active
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
5
4
20
90
6
±20
2
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-10-28