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BSO4822 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Small-Signal-Transistor
Preliminary data
BSO4822
OptiMOSâ Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on) product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Product Summary
VDS
30 V
RDS(on) 10 mΩ
ID
12.7 A
Type
BSO4822
Package
SO 8
Ordering Code
Q67042-S4095
Marking
4822
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=12.7 A , VDD=25V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=12.7A, VDS=24V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
12.7
10.2
51
165
6
±20
2.5
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-28