BSO304SN Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary Data
SIPMOS^ Small-Signal-Transistor
Features
Product Summary
• Single N channel
Drain source voltage
• Enhancement mode
Drain-Source on-state resistance
• Avalanche rated
Continuous drain current
• Logic Level
• dv/dt rated
BSO 304SN
V_DS
30 V
R_DS(on) 0.03 Ω
I_D
6.4 A
Type
Package
BSO 304 SN SO 8
Maximum Ratings, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A = 25 ˚C
Pulsed drain current
T_A = 25 ˚C
Avalanche energy, single pulse
I_D = 6.4 A, V_DD = 25 V, R_GS = 25 Ω
I_D
IDpulse
E_AS
Avalanche current,periodic limited by T_jmax
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_AR
E_AR
dv/dt
I_S = 6.4 A, V_DS = 24 V, di/dt = 200 A/µs,
T_jmax = 150 ˚C
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 ˚C
Operating temperature
T_j
Storage temperature
T_stg
IEC climatic category; DIN IEC 68-1
Ordering Code
Q67000-S4012
Value
Unit
6.4
A
25.6
90
mJ
6.4
A
0.2
mJ
6
kV/µs
±20
V
2
W
-55 ... +150
˚C
-55 ... +150
55/150/56
Data Sheet
1
05.99