BSO303SPH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P Power-Transistor

OptiMOS^®-P Power-Transistor
Features
• single P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for traget applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSO303SP H
Product Summary
V _DS
R _DS(on),max
I_D
V_GS=-4.5 V
V_GS=-2.5 V
PG-DSO-8
-30 V
21 mΩ
31 mΩ
-9.1 A
Type
BSO303SP H
Package
PG-DSO-8
Marking
303SP
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
Pulsed drain current²⁾
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
T _A=70 °C
T _A=25 °C²⁾
Value
Unit
≤10 secs steady state
-9.1
-7.2 A
-7.1
-5.8
-8.9
-7.2 A
-7.1
-5.8
-36
Avalanche energy, single pulse
E _AS
I _D= -9.1 A, R _GS=25 Ω
97
mJ
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _A=25 °C¹⁾
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±20
V
2.50
1.56 W
-55 ... 150
°C
1B (500V - 1 kV)
260
°C
55/150/56
Rev. 1.1
page 1
2010-05-12