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| BSO303SP Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS -P Small-Signal-Transistor | |||
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Preliminary data
BSO303SP
OptiMOSï-P Small-Signal-Transistor
Feature
⢠P-Channel
⢠Enhancement mode
⢠Logic Level
⢠150°C operating temperature
⢠Avalanche rated
⢠dv/dt rated
Product Summary
VDS
-30 V
RDS(on) 21 mâ¦
ID
-8.9 A
S1
S2
S3
8D
7D
6D
G4
5D
Top View SIS00062
Type
BSO303SP
Package
SO 8
Ordering Code
Q67042-S4129
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-8.9 A , VDD=-25V, RGS=25â¦
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-8.9A, VDS=-24V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-8.9
-7.1
-35.6
97
-6
±20
2.35
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-08
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