BSO303PH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P Small-Signal-Transistor

OptiMOS^®-P Small-Signal-Transistor
Features
• Dual P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Halogen-free according to IEC61249-2-21
BSO303P H
Product Summary
V _DS
R _DS(on),max
V _GS =-10V
V _GS =-4.5V
I_D
-30 V
21 mΩ
32
-8.2 A
SO 8
Type
BSO303P H
Package
PG-DSO- 8
Marking Lead free Halogen free
303P
Yes
Yes
Packing
dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=70 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=-8.2 A, R _GS=25 Ω
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
-8.2
-7.0 A
-6.6
-5.8
-32.8
97
mJ
±20
V
2
W
-55 ... 150
°C
1B (500V - 1kV)
260 °C
55/150/56
Rev. 1.3
page 1
2010-02-10