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| BSO301SPH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P Power-Transistor | |||
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OptiMOS®-P Power-Transistor
Features
⢠P-Channel
⢠Enhancement mode
⢠Logic level
⢠150°C operating temperature
⢠Avalanche rated
⢠Qualified according JEDEC for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
BSO301SP H
Product Summary
V DS
R DS(on),max
VGS= 10 V
VGS= 4.5 V
-30 V
8.0 mâ¦
12.0 A
ID
-14.9 A
PG-DSO-8
Type
BSO301SP H
Package
PG-DSO-8
Marking
301SP
Leadfree
Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
â¤10 secs steady state
-14.9
-12.6 A
-11.9
-10
-60
Avalanche energy, single pulse
E AS
I D=-14.9 A, R GS=25 â¦
248
mJ
Gate source voltage
Power dissipation
Operating and storage temperature
V GS
P tot
T A=25 °C1)
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±20
V
2.5
1.79 W
-55 ... 150
°C
1C (1kV - 2kV)
260
°C
55/150/56
Rev. 1.32
page 1
2010-05-12
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