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| BSO220N03MDG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET | |||
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BSO220N03MD G
OptiMOSâ¢3 M-Series Power-MOSFET
Features
⢠Dual N-channel
⢠Optimized for 5V driver application (Notebook, VGA, POL)
⢠Low FOMSW for High Frequency SMPS
⢠100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
V GS=10 V
V GS=4.5 V
30 V
22 mâ¦
27
7.7 A
⢠Very low on-resistance R DS(on) @ V GS=4.5 V
⢠Excellent gate charge x R DS(on) product (FOM)
PG-DSO-8
⢠Qualified for consumer level application
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
Type
BSO220N03MD G
Package
PG-DSO-8
Marking
220N03MD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
ID
V GS=10 V, T A=25 °C
V GS=10 V, T A=90 °C
V GS=4.5 V, T A=25 °C
Value
Unit
10 secs steady state
7.7
6
A
5.3
4.4
6.9
5.8
V GS=4.5 V, T A=90 °C
Pulsed drain current2)
I D,pulse T A=25 °C
Avalanche current, single pulse3)
I AS
T A=25 °C
Avalanche energy, single pulse
E AS
I D=7.7 A, R GS=25 â¦
Gate source voltage
V GS
Power dissipation1)
P tot
T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
4.8
4
54
7.7
9
mJ
±20
V
2
1.4
W
-55 ... 150
°C
55/150/56
Rev.1.1
page 1
2009-11-19
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