BSO215C Datasheet, PDF (1/13 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary data
BSO 215 C
SIPMOS^® Small-Signal-Transistor
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Product Summary
N
Drain source voltage
Drain-Source on-state
resistance
V_DS
20
R_DS(on) 0.1
Continuous drain current I_D
3.7
P
-20 V
0.1 Ω
-3.7 A
Type
BSO 215 C
Package
SO 8
Ordering Code
Q67041-S4025
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A = 25 °C
T_A = 70 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
I_D = 3 A, V_DD = 15 V, R_GS = 25 Ω
I_D = -3.7 A , V_DD = -15 V, R_GS = 25 Ω
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt, T_jmax = 150 °C
I_S = 3 A, V_DS = 16 V, di/dt = 200 A/µs
I_S = -2.7 A, V_DS = -16 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_D
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
N
P
3.7
-3.7
3
-3
14.8 -14.8
26
-
-
68
0.2
0.2
6
-
-
6
±20
±20
2
2
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-09-22