BSO211PH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P-Power-Transistor

OptiMOS^® P-Power-Transistor
Features
• dual P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSO211P H
Product Summary
V _DS
R _DS(on),max
I_D
V _GS=4.5 V
V _GS=2.5 V
-20 V
67 mΩ
110
4.6 A
PG-DSO-8
Type
BSO211P H
Package
PG-DSO-8
Marking
211P
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
I_D
V _GS=4.5 V, T _A=25 °C
Value
Unit
10 secs steady state
-4.6
-4.0 A
V _GS=4.5 V, T _A=70 °C
-3.7
-3.2
V _GS=2.5 V, T _A=25 °C
-3.6
-3.2
V _GS=2.5 V, T _A=70 °C
Pulsed drain current²⁾
Avalanche energy, single pulse
Gate source voltage
Power dissipation¹⁾
Operating and storage temperature
ESD class
I _D,pulse T _A=25 °C
E _AS
I _D=-4.6 A, R _GS=25 Ω
V _GS
P _tot
T _A=25 °C
T _j, T _stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
-2.9
-2.5
-18.4
28
mJ
±12
V
2.0
1.6
W
-55 ... 150
°C
0 (0-250V)
260
°C
55/150/56
Rev.1.3
page 1
2010-02-10