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| BSO203SPH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P-Power-Transistor | |||
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BSO203SP H
OptiMOS® P-Power-Transistor
Features
⢠single P-Channel in SO8
⢠Qualified according JEDEC for target applications
⢠150°C operating temperature
⢠Super Logic Level (2.5V rated)
Product Summary
V DS
R DS(on),max
ID
V GS=4.5 V
V GS=2.5 V
-20 V
21 mâ¦
34
-8.9 A
⢠Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21
PG-DSO-8
Type
BSO203SP H
Package
PG-DSO-8
Marking
203SP
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
ID
I D,pulse
V GS= -4.5 V,
T A=25 °C
V GS= -4.5 V,
T A=70 °C
V GS= -2.5 V,
T A=25 °C
V GS= -2.5 V,
T A=70 °C
T A=25 °C
Avalanche energy, single pulse
E AS
I D=--8.9 A, R GS=25 â¦
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD class
V GS
P tot
T A=25 °C
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev.1.31
page 1
Value
Unit
10 secs steady state
-8.9
-7.0 A
-7.1
-5.8
-7.0
-5.7
-5.6
-4.5
-35.6
97
±12
2.5
1.6
-55 ... 150
1B (500V - 1 kV)
260
55/150/56
mJ
V
W
°C
°C
2010-02-10
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