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BSO150N03 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS2 Power-Transistor
OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• Dual n-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSO150N03
30 V
15 mΩ
9.1 A
P-DSO-8
Type
BSO150N03
Package
P-DSO-8
Ordering Code Marking
Q67042-S4215 150N3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C2)
T A=70 °C2)
T A=25 °C3)
Avalanche energy, single pulse
E AS
I D=9.1 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=9.1 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
V GS
P tot
T A=25 °C2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
9.1
7.6
A
7.3
6.1
36
82
mJ
6
kV/µs
±20
V
2.0
1.4
W
-55 ... 150
°C
55/150/56
Rev. 1.11
page 1
2004-02-09