BSO119N03S Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC¹ for target applications
• N-channel
• Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Avalanche rated
• dv /dt rated
Product Summary
V _DS
R _DS(on),max
I_D
BSO119N03S
30 V
11.9 mΩ
11 A
P-DSO-8
Type
BSO119N03S
Package
P-DSO-8
Ordering Code Marking
Q67042-S4211 119N3S
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C²⁾
T _A=70 °C²⁾
T _A=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=11 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=11 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation
V _GS
P _tot
T _A=25 °C²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
11
9.0
A
9.1
7.2
44
58
mJ
6
kV/µs
±20
V
2.5
1.56 W
-55 ... 150
°C
55/150/56
Rev. 1.11
page 1
2004-02-09