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| BSO083N03MSG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET | |||
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BSO083N03MS G
OptiMOSâ¢3 M-Series Power-MOSFET
Features
⢠Optimized for 5V driver application (Notebook, VGA, POL)
⢠Low FOMSW for High Frequency SMPS
⢠100% Avalanche tested
⢠N-channel
⢠Very low on-resistance R DS(on) @ V GS=4.5 V
⢠Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
V GS=10 V
V GS=4.5 V
30 V
8.3 mâ¦
10.5
14 A
PG-DSO-8
⢠Qualified for consumer level application
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
Type
BSO083N03MS G
Package
PG-DSO-8
Marking
083N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
ID
V GS=10 V, T A=25 °C
V GS=10 V, T A=90 °C
V GS=4.5 V, T A=25 °C
V GS=4.5 V, T A=90 °C
Pulsed drain current2)
Avalanche current, single pulse3)
I D,pulse
I AS
T A=25 °C
T A=25 °C
Avalanche energy, single pulse
Gate source voltage
Power dissipation1)
Operating and storage temperature
E AS
I D=14 A, R GS=25 â¦
V GS
P tot
T A=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
14
11
A
9.7
7.6
12.4
9.8
8.6
6.8
98
14
35
mJ
±20
V
2.5
1.56 W
-55 ... 150
°C
55/150/56
Rev.1.1
page 1
2009-11-19
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