BSO080P03SH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOTM-P Power-Transistor

OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
BSO080P03S H
-30 V
8
mΩ
-14.9 A
PG-DSO-8
Type
BSO080P03S H
Package
P-DSO-8
Marking lead free
080P3S Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C¹⁾
T _A=70 °C¹⁾
T _A=25 °C²⁾
Value
Unit
≤10 secs steady state
-14.9
-12.6 A
-11.9
-10
-60
Avalanche energy, single pulse
E _AS
I _D=-14.9 A, R _GS=25 Ω
248
mJ
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _A=25 °C¹⁾
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
V
2.5
1.79 W
-55 ... 150
°C
260
55/150/56
Rev. 1.31
page 1
2010-02-10