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| BSO038N03MSCG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET | |||
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BSO038N03MSC G
OptiMOSâ¢3 M-Series Power-MOSFET
Features C-Series
⢠Optimized for 5V driver application (Notebook, VGA, POL)
⢠Low FOMSW for High Frequency SMPS
⢠100% Avalanche tested
⢠N-channel
Product Summary
V DS
R DS(on),max
ID
V GS=10 V
V GS=4.5 V
30 V
3.8 mâ¦
4.7
21 A
⢠Very low on-resistance R DS(on) @ V GS=4.5 V
⢠Excellent gate charge x R DS(on) product (FOM)
PG-DSO-8
⢠Qualified for consumer level application
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
Type
BSO038N03MSC G
Package
PG-DSO-8
Marking
038N03MSC
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
ID
V GS=10 V, T A=25 °C
V GS=10 V, T A=90 °C
V GS=4.5 V, T A=25 °C
V GS=4.5 V, T A=90 °C
Pulsed drain current2)
I D,pulse T A=25 °C
Avalanche current, single pulse3)
I AS
T A=25 °C
Avalanche energy, single pulse
E AS
I D=21 A, R GS=25 â¦
Gate source voltage
V GS
Power dissipation1)
P tot
T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
21
16
A
14.3
11.3
19
15.0
13.0
10
147
21
145
mJ
±20
V
2.5
1.56 W
-55 ... 150
°C
55/150/56
Rev.1.1
page 1
2009-11-19
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