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BSO-302SN Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor | |||
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Preliminary Data
SIPMOSï Small-Signal-Transistor
Features
Product Summary
⢠Single N channel
Drain source voltage
⢠Enhancement mode
Drain-Source on-state resistance
⢠Avalanche rated
Continuous drain current
⢠Logic Level
⢠dv/dt rated
BSO 302SN
VDS
30 V
RDS(on) 0.013 â¦
ID
9.8 A
Type
Package
BSO 302SN SO 8
Maximum Ratings, at Tj = 25 ËC, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 ËC
Pulsed drain current
ID
IDpulse
TC = 25 ËC
Avalanche energy, single pulse
EAS
ID = 9.8 A, VDD = 25 V, RGS = 25 â¦
Avalanche current,periodic limited by Tjmax
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
IAR
EAR
dv/dt
IS = 9.8 A, VDS = 24 V, di/dt = 200 A/µs,
Tjmax = 150 ËC
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 ËC
Operating temperature
Tj
Storage temperature
Tstg
IEC climatic category; DIN IEC 68-1
Ordering Code
Q67041-S4029
Value
Unit
9.8
A
39.2
250
mJ
9.8
A
0.2
mJ
6
kV/µs
± 20
V
2
W
-55 ... +150
ËC
-55 ... +150
55/150/56
Data Sheet
1
05.99
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