BSN045NE2LS Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Optimized for high performance Buck converter

BSN045NE2LS
OptiMOS^TM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Very low parasitic inductance
• Low profile (<0.5 mm)
• Double side cooling
• N-channel
Product Summary
V_DS
R_DS(on),max
I_D
Q_OSS
Q_G(0V..10V)
25 V
4.5 mW
50 A
7.6 nC
11 nC
• 100% avalanche tested
• Very low on-resistance R _DS(on) @ V _GS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC¹⁾ for target applications
LG-USON-6-1
Type
BSN045NE2LS
Package
LG-USON-6-1
Marking
045NE2L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
T _C=25 °C
T _C=25 °C
I _D=35 A, R _GS=25 W
Rev. 2.0
page 1
Value
Unit
50
A
47
50
39
19
200
35
5
mJ
±20
V
2014-05-23