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BSM10GD120DN2 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Power module | |||
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BSM 10 GD 120 DN2
IGBT Power Module
⢠Power module
⢠3-phase full-bridge
⢠Including fast free-wheel diodes
⢠Package with insulated metal base plate
Type
BSM 10 GD 120 DN2
BSM 10 GD120DN2E3224
VCE IC
1200V 15A
1200V 15A
Package
ECONOPACK 2
ECONOPACK 2K
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kâ¦
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67076-A2513-A67
C67070-A2513-A67
Values
Unit
1200
V
1200
± 20
A
15
10
30
20
W
80
+ 150
°C
-40 ... + 125
⤠1.52
K/W
â¤2
2500
Vac
16
mm
11
F
sec
40 / 125 / 56
1
2006-01-31
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