BSL316C_14 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Enhancement mode

BSL316C
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Features
Product Summary
· Complementary P + N channel
· Enhancement mode
· Logic level (4.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
V_DS
R_DS(on),max
I_D
V_GS=±10 V
V_GS=±4.5 V
P
N
-30 30 V
150 160 mW
270 280
-1.5 1.4 A
· 100% lead-free; RoHS compliant
· Halogen free according to IEC61249-2-21
PG-TSOP6
6
5
4
1
2
3
Type
Package
BSL316C PG-TSOP-6
Tape and Reel Information
H6327: 3000 pcs / reel
Marking
sPJ
Lead Free Packing
Yes
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified ¹⁾
Parameter
Symbol Conditions
Continuous drain current
I_D
T _A=25 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation¹⁾
Operating and storage temperature
T _A=70 °C
I _D,pulse T _A=25 °C
P: I _D=-1.5 A,
E _AS
N: I _D=1.4 A,
R _GS=25 W
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD class
JESD22-A114-HBM
Soldering temperature
T _solder
IEC climatic category; DIN IEC 68-1
1) _{Remark: only one of both transistors active}
Value
Unit
P
N
-1.5
1.4
A
-1.2
1.1
-6.0
5.6
11
3.7
mJ
±20
V
0.5
W
-55 ... 150
°C
0 (<250V)
260
°C
55/150/56
Rev. 2.3
page 1
2014-07-21