BSL307SP Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS -P Small-Signal-Transistor

Preliminary data
OptiMOS^-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
BSL307SP
Product Summary
V_DS
-30 V
R_DS(on) 43 mΩ
I_D
-5.5 A
P-TSOP-6-1
4
3
5
2
6
1
Type
Gate
Package
Ordering Code Marking
pin 3
BSL307SP
P-TSOP-6-1 Q67042-S4067 sPC
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=-5.5 A , V_DD=-25V, R_GS=25Ω
Reverse diode dv/dt
I_{D puls}
E_AS
dv/dt
I_S=-5.5A, V_DS=24V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-5.5
-4.4
-22
44
-6
±20
2
-55... +150
55/150/56
Drain
pin 1,2,
5,6
Source
pin 4
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-12-12