BSL211SP_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS-P Small-Signal-Transistor

Rev 1.1
OptiMOS^-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
BSL211SP
Product Summary
V_DS
-20 V
R_DS(on) 67 mΩ
I_D
-4.7 A
P-TSOP6-6
4
3
5
2
6
1
Type
Gate
Package
Tape and reel Marking
pin 3
BSL211SP
P-TSOP6-6 L6327: 3000pcs/r. sPB
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=-4.7 A , V_DD=-10V, R_GS=25Ω
Reverse diode dv/dt
I_{D puls}
E_AS
dv/dt
I_S=-4.7A, V_DS=-16V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-4.7
-3.8
-18.8
26
-6
±12
2
-55... +150
55/150/56
Drain
pin 1,2,
5,6
Source
pin 4
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2007-02-08