BSG0810NDI_16 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Power Block

BSG0810NDI
Power Block
Product Summary
Features
• Dual asymmetric N-channel OptiMOS™5 MOSFET
• Logic level (4.5V rated)
V_DS
R_DS(on),max
V_GS=10 V
Q1
Q2
25
25 V
3
0.85 mW
• Pb-free lead plating; RoHS compliant
• Optimized for high performance Buck converter
I_D
V_GS=4.5 V
4
1.2
50
50 A
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
• Monolithic integrated Schottky like diode
S1/D2 (VPhase) (5)
S1/D2 (VPhase) (6)
(4) _{D1 (Vin)}
Q1
(9)
(3) _{D1 (Vin)}
S1/D2 (VPhase) (7)
Q2
G2 (GLS) ⁽⁸⁾
(10)
(2) S1 (VPhase)
(1) _{G1 (GHS)}
S2 (GND)
Top view
Type
BSG0810NDI
Package
PG-TISON8-4
Marking
0810NDI
Maximum ratings, at T_j=25°C, unless otherwise specified ²⁾
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=70 °C, V _GS=10 V
T _C=70 °C, V _GS=4.5 V
T _A=25 °C,
V _GS=4.5 V³⁾
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Rev.2.1
T _A=25 °C,
V _GS=4.5 V⁴⁾
I _D,pulse
E _AS
V _GS
T _C=70 °C
Q1: I _D=10 A,
Q2: I _D=20 A,
R _GS=25 W
T _j=25 °C
P _tot
T _A=25 °C³⁾
T _A=25 °C⁴⁾
T _j, T _stg
page 1
Value
Unit
Q1
Q2
50
50
A
50
50
31
50
19
39
160
160
30
90
mJ
±16
V
6.25
6.25 W
2.5
2.5
-55 ... 150
°C
55/150/56
2016-03-08