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BSF083N03LQG Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS2 Power-MOSFET | |||
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BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features
⢠Optimized for high switching frequency DC/DC converter
⢠Very low on-resistance R DS(on)
⢠Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30 V
8.3 mâ¦
53 A
⢠Low profile (<0.7 mm)
⢠Double-sided cooling
⢠Low parasitic inductance
MG-WDSON-2
⢠100% avalanche tested
⢠Qualified for consumer level application
⢠Compatible with DirectFET® package SQ footprint and outline 1)
⢠Pb-free plating; RoHS compliant
Type
BSF083N03LQ G
Package
MG-WDSON-2
Outline
SQ
Marking
6003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
53
A
33
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
13
Pulsed drain current3)
I D,pulse T C=25 °C
212
Avalanche current, single pulse4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=38 A, R GS=25 â¦
30
mJ
Gate source voltage
V GS
±20
V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
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