BSD840N Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™2 Small-Signal-Transistor

OptiMOS™2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
BSD840N
Product Summary
V _DS
R _DS(on),max
I_D
V _GS=2.5 V
V _GS=1.8 V
20 V
400 mΩ
560
0.88 A
PG-SOT-363
6 ₅₄
1
23
Type
BSD840N
Package
Tape and Reel Information
PG-SOT-363 L6327: 3000 pcs/ reel
Marking
XBs
Lead Free
Yes
Packing
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter ¹⁾
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Value
Unit
0.88
A
0.71
3.5
Avalanche energy, single pulse
E _AS
I _D=0.88 A, R _GS=16 Ω
1.6
mJ
Reverse diode dv /dt
dv /dt
I _D=0.88 A, V _DS=16 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation ²⁾
Operating and storage temperature
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1) _{Remark: only one of both transistors in operation.}
6
±8
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.2
page 1
2010-03-26