BSC900N20NS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

Type
$(*'#$%^TM3 Power-Transistor
Features
9 /2*, *7&% '.0% $ % $ $ .- 4&01*.-
9 $ )" - - &+ - .0, " ++&4&+
9 6$ &++&- 2 (" 2& $ )" 0(& 6R _DS(on) product (FOM)
9 .5 .- 0&1*12" - $ & R _DS(on)
9  8 ./&0" 2*- ( 2&, /&0" 230&
9 # '0&& +&" % /+" 2*- (  . $ ., /+*" - 2
9 3" +*'*&% " $ $ .0% *- ( 2.      ¹⁾ for target application
9 " +.(&- '0&& " $ $ .0% *- ( 2.         
BSC900N20NS3 G
Product Summary
V_DS
R_DS(on),max
I_D
200 V
90 m#
15.2 A
PG-TDSON-8
Type
BSC900N20NS3 G
Package
PG-TDSON-8
Marking
900N20NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=7.6 A, R _GS=25 #
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
Value
Unit
15.2
A
10.7
61
100
mJ
±20
V
62.5
W
-55 ... 150
°C
55/150/56
Rev. 2.1
page 1
2010-09-01