BSC520N15NS3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS™3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant;
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
BSC520N15NS3 G
Product Summary
V _DS
R _DS(on),max
I_D
150 V
52 mΩ
21 A
PG-TDSON-8
Type
BSC520N15NS3 G
Package
PG-TDSON-8
Marking
520N15NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=18 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
21
A
14
84
60
mJ
±20
V
57
W
-55 ... 150
°C
55/150/56
Rev. 2.2
page 1
2009-11-04