BSC340N08NS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC340N08NS3 G
BSC340N08NS3 G
Product Summary
V _DS
R _DS(on),max
I_D
80 V
34 mΩ
23 A
Package
Marking
PG-TDSON-8
340N08NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Value
Unit
23
A
15
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
7
Pulsed drain current³⁾
Avalanche energy, single pulse⁴⁾
Gate source voltage
I _D,pulse
E _AS
V _GS
T _C=25 °C
I _D=12 A, R _GS=25 Ω
92
20
mJ
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.6
page 1
2009-11-04