BSC205N10LSG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

BSC205N10LS G
OptiMOS^™2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 150 °C operating temperature
Product Summary
V _DS
R _DS(on),max
I_D
100 V
20.5 mΩ
45 A
PG-TDSON-8
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
BSC205N10LS G
Package
PG-TDSON-8
Marking
205N10LS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Gate source voltage
E _AS
V _GS
I _D=45 A, R _GS=25 Ω
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
45
A
29
7.4
180
60
mJ
±20
V
76
W
-55 ... 150
°C
55/150/56
Rev. 2.08
page 1
2009-11-04