BSC160N15NS5 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM 5 Power-Transistor, 150 V

BSC160N15NS5
MOSFET
OptiMOS^TM5Power-Transistor,150V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
16
mΩ
ID
56
A
Qrr
26
nC
SuperSO8
8 _{7 65}
56 ₇₈
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC160N15NS5
Package
PG-TDSON-8
Marking
160N15NS
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.2,2016-01-22